NCP1606
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified: For typical values, T
J
= 25癈. For min/max values, T
J
= 40癈 to +125癈, V
CC
= 12 V, FB = 2.4 V, C
DRV
=
1 nF, Ct = 1 nF, CS = 0 V, Control = open, ZCD = open)
Symbol
Unit
Max
Typ
Min
Rating
V
CL(NEG)
Negative Active Clamp Voltage @ I
ZCD
= 2.5 mA
0.45
0.6
0.75
V
I
CL(NEG)
Current Capability of the Negative Active Clamp:
in normal mode (V
ZCD
= 300 mV)
in shutdown mode (V
ZCD
= 100 mV)
2.5
35
3.7
70
5.0
100
mA
mA
V
SD
L
Shutdown Threshold (V
ZCD
falling)
150
200
250
mV
V
SD
H
Enable Threshold (V
ZCD
rising)
290
350
mV
V
SD
HYS
Shutdown Comparator Hysteresis
90
mV
t
ZCD
Zero current detection propagation delay
100
170
ns
t
SYNC
Minimum detectable ZCD pulse width
70
ns
t
START
Drive off restart timer
75
180
300
ms
RAMP CONTROL
I
CHARGE
Charge Current (V
CT
= 0 V)
25癈 < T
J
< +125癈
40癈 < T
J
< +125癈
243
235
270
270
297
297
mA
t
CT(discharge)
Time to discharge a 1 nF Ct capacitor from V
CT
= 3.4 V to 100 mV.
100
ns
V
CTMAX
Maximum Ct level before DRV switches off
25癈 < T
J
< +125癈
40癈 < T
J
< +125癈
2.9
2.9
3.2
3.2
3.3
3.4
V
t
PWM
Propagation delay of the PWM comparator
150
220
ns
OVER AND UNDERVOLTAGE PROTECTION
I
OVP
Dynamic overvoltage protection (OVP) triggering current:
NCP1606A
NCP1606B @ T
J
= 25癈
NCP1606B @ T
J
= 40癈 to +125癈
34
9.0
8.7
40
10.4
45
11.8
12.1
mA
I
OVP(HYS)
Hysteresis of the dynamic OVP current before the OVP latch is released:
NCP1606A
NCP1606B
30
8.5
mA
V
OVP
Static OVP Threshold Voltage
V
EAL
+
100 mV
V
V
UVP
Undervoltage protection (UVP) threshold voltage
0.25
0.3
0.4
V
GATE DRIVE SECTION
R
OH
R
OL
Gate Drive Resistance:
R
OH
@ I
SOURCE
= 100 mA
R
OH
@ I
SOURCE
= 20 mA
R
OL
@ I
SINK
= 100 mA
R
OL
@ I
SINK
= 20 mA
12
12
6
6
18
18
10
10
W
t
rise
Drive voltage rise time from 10% V
CC
to 90% V
CC
with C
DRV
= 1 nF and V
CC
= 12 V.
30
80
ns
t
fall
Drive voltage fall time from 90% V
CC
to 10% V
CC
with C
DRV
= 1 nF and V
CC
= 12 V.
25
70
ns
V
OUT(start)
Driver output voltage at V
CC
= V
CC(on)
200 mV and I
sink
= 10 mA
0.2
V
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NCP1607BDR2G
IC PFC CONTROLLER CRM 8SOIC
NCP1611BDR2G
IC PFC CTLR HE ENHANCED 8-SOIC
NCP1651DR2G
IC PFC CONTROLLER CCM/DCM 16SOIC
NCP1654BD133R2G
IC PFC CCM 133KHZ 8-SOIC
NCP1927DR2G
IC CTLR PFC/FLYBACK 16-SOIC
NCP380HMU21AATBG
IC CURRENT LIMIT SWITCH 6-UDFN
NCT1008DMT3R2G
TMP DIO MON/SMBUS 4CH 8WDFN
NCT210RQR2G
IC TEMP SENSOR LOC/REM 16QSOP
相关代理商/技术参数
NCP1606BOOSTGEVB
功能描述:电源管理IC开发工具 OSPI NCP1606 100 W BOOST
RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
NCP1606BPG
功能描述:功率因数校正 IC LO CST PWR FCTR CONT RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel
NCP1607BDR2G
功能描述:功率因数校正 IC CST EFCT PW FCTR CTR RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel
NCP1607BOOSTGEVB
功能描述:BOARD EVAL NCP1607 100W BOOST RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:* 标准包装:1 系列:PCI Express® (PCIe) 主要目的:接口，收发器，PCI Express 嵌入式:- 已用 IC / 零件:DS80PCI800 主要属性:- 次要属性:- 已供物品:板
NCP1608BDR2G
功能描述:功率因数校正 IC COST EFFECT PWR FACT CONT RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel
NCP1608BOOSTGEVB
功能描述:电源管理IC开发工具 NCP1608 100 W BOOST EVB PWR SPY
RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V
NCP1611ADR2G
功能描述:功率因数校正 IC NCP1611A ENHANCED PFC
RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel
NCP1611BDR2G
功能描述:功率因数校正 IC NCP1611A ENHANCED PFC RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel